The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Nov. 06, 2000
Ming-Dou Ker, Hsinchu, TW;
Mau-Lin Wu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A layout form ESD-protection MOS transistors include gate electrodes of the ESD-protection MOS transistors being formed with wider ends at the periphery of the active region, whereby the transistors have improved turn-on uniformity. The ESD protection transistors are NMOS and PMOS. The source contacts and drain contacts for transistors are located inboard of the periphery of the active region leaving space for the wider ends of the gate electrodes. The wider ends of the gate electrodes straddle the peripheral boundaries of the active region. A modified layout style is provided for stacked NMOS and PMOS devices in the high-voltage-tolerant I/O circuits with the wider ends being provided on only the inner transistors.