The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Apr. 11, 2001
Applicant:
Inventors:
Kazuhiro Ohnishi, Kodaira, JP;
Naoki Yamamoto, Kawaguchi, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/9788 ;
Abstract
A semiconductor device with an MOS transistor gate electrode in a stacked structure comprising a silicon layer, a metal silicide layer, a reaction barrier layer such as a metal nitride layer and a metallic layer formed from the bottom upwards has an increased circuit performance owing to a gate resistance-reducing effect.