The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2004

Filed:

Jun. 28, 2002
Applicant:
Inventors:

Masanari Koguchi, Kunitachi, JP;

Kuniyasu Nakamura, Musashino, JP;

Kaoru Umemura, Musashino, JP;

Yoshifumi Taniguchi, Hitachinaka, JP;

Mikio Ichihashi, Nagoya, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 3/726 ;
U.S. Cl.
CPC ...
H01J 3/726 ;
Abstract

Disclosed is an observation apparatus and method using an electron beam, capable of measuring stress and strain information on a crystal structure in a specimen using electron beam diffraction images. A method according to the invention includes mounting a specimen on a specimen stage; irradiating a predetermined area in the specimen with an electron beam while scanning the electron beam, and acquiring an enlarged image of a specimen internal structure in the predetermined area; irradiating a specific portion included in the predetermined area and acquiring a diffraction image showing the crystal structure in the specimen; extracting information on the crystal structure in the specimen; displaying the information of the crystal structure in the specimen so as to be superimposed on the acquired enlarged image. The observation method according to the invention can obtain information on the crystal structure in a specimen with a high degree of sensitivity and with a high level of resolution.


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