The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Apr. 19, 2002
Applicant:
Inventors:
Ramoothy Ramesh, Silver Spring, MD (US);
Yu Wang, Greenbelt, MD (US);
Jeffrey M. Finder, Chandler, AZ (US);
Kurt Eisenbeiser, Tempe, AZ (US);
Zhiyi Yu, Gilbert, AZ (US);
Ravindranath Droopad, Chandler, AZ (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.