The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2004

Filed:

Jul. 13, 2001
Applicant:
Inventors:

Ming-Dou Ker, Hsinchu, TW;

Kei-Kang Hung, Changhua, TW;

Hsin-Chin Jiang, Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 5/08 ;
U.S. Cl.
CPC ...
H03K 5/08 ;
Abstract

An integrated circuit that includes a signal pad, a clamping circuit including a first NMOS transistor having a drain, a source, a gate and a substrate, wherein the drain of the first NMOS transistor is coupled to the signal pad and the source of the first NMOS transistor is coupled to ground, and a control circuit coupled to the gate and substrate of the first NMOS transistor and the signal pad, the control circuit providing a first bias voltage signal to the gate and a second bias voltage signal to the substrate. The voltage level of the first bias voltage signal may be equal to, greater than, or less than the second bias voltage signal. By independently optimizing the trigger levels of the substrate and gate of the transistor in the clamping circuit, a robust ESD protection circuit can be obtained to suit the requirements of different process technologies.


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