The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Jul. 20, 2000
Jiro Matsufusa, Tokyo, JP;
Tomoharu Mametani, Tokyo, JP;
Takeshi Kishida, Tokyo, JP;
Yoji Nakata, Tokyo, JP;
Yukihiro Nagai, Tokyo, JP;
Hiroaki Nishimura, Tokyo, JP;
Akinori Kinugasa, Tokyo, JP;
Shigenori Kido, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device having a test mark comprising: a semiconductor substrate; a first TEOS layer formed on the semiconductor substrate; a second TEOS layer formed on the first TEOS layer and having a fluidity lower than that of the first TEOS layer at an elevated temperature; a recess formed in the first and second TEOS layers and exposing the surface of the semiconductor substrate, wherein the horizontal cross section of the recess is substantially rectangular in configuration; and a metal layer formed between the first and second TEOS layers and opposing to the corner of the recess.