The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Sep. 09, 2002
Ippei Shimizu, Tokyo, JP;
Shu Shimizu, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device is provided which is capable of reducing the number of masking processes in forming contact holes. The semiconductor device comprises a semiconductor substrate ( ), a gate structure ( ), a stopper film ( ), an interlayer insulation film ( ), a contact hole ( ) extending from the upper surface ( ) of the interlayer insulation film ( ) to the semiconductor substrate ( ), a metal material ( ) buried in the contact hole ( ), a first metal wiring layer ( ), an interlayer insulation film ( ), a contact hole ( ) extending from the upper surface ( ) of the interlayer insulation film ( ) to the first metal wiring layer ( ), and a contact hole ( ) extending from the upper surface ( ) of the interlayer insulation film ( ) to a gate electrode ( ) of the gate structure ( ). The contact hole ( ) is formed at the same time as the contact hole ( ).