The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Jan. 26, 2001
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A plasma etch process for organic low-k dielectric layers using NH only, or NH /H or NH /H gases. A low k dielectric layer is formed over a substrate. A masking pattern is formed over the low k dielectric layer. The masking pattern has an opening. Using the invention's etch process, the low k dielectric layer is etched through the opening using the masking pattern as an etch mask. In a first embodiment, the etch process comprises: etching the low k dielectric layer by applying a plasma power and flowing only NH gas. In a second embodiment, the etch process comprises: etching the low k dielectric layer by applying a plasma power and flowing only NH /H gas. In a third embodiment, the etch process comprises: etching the low k dielectric layer by applying a plasma power and flowing only NH /N gas. The invention's NH containing plasma etch etches organic Low k materials unexpectedly fast. The invention's NH only etch had a 30 to 80% high etch rate than N /H etches of low-k materials like Silk™.