The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Sep. 28, 2000
Michiaki Sano, Chiba, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A plasma processing method that makes it possible to remove a photoresist film and fence portion while maintaining a specific shape of the opening is provided. After a wafer W is placed on a lower electrode provided inside a processing chamber of an ashing apparatus , power with its frequency set at 60 MHz and its level set at 1 kW and power with its frequency set at 2 MHz and its level set at 250 W are respectively applied to an upper electrode and the lower electrode . A processing gas induced into the processing chamber is raised to plasma, a photoresist film at the wafer W is ashed and, at the same time, fence portion formed around the opening of a via hole during the etching process is removed. The level of the power applied to the lower electrode is set equal to or lower than 10 W before the photoresist film is completely removed. As a result, the energy level of the ions induced into the wafer W becomes reduced, so that the photoresist film is ashed without grinding shoulders and of the via hole and groove at the SiO film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile