The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Apr. 30, 2002
Applicant:
Inventors:
Ching Thiam Chung, Singapore, SG;
Kay Jin Lee, Singapore, SG;
Assignee:
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ; H01L 2/1311 ;
U.S. Cl.
CPC ...
H01L 2/176 ; H01L 2/1311 ;
Abstract
A new method of forming a laser mark without damage to the wafer surface is described. A pad oxide layer is formed on a silicon wafer. A nitride layer is deposited overlying the pad oxide layer. A first trench is laser cut through the nitride layer and the pad oxide layer into the silicon wafer. The trench is etched to a second depth wherein the nitride layer is used as a hard mask and wherein the trench forms an identification mark.
Chung, Ching. (2004). Method of wafer marking for multi-layer metal processes (U.S. Patent No. 6743694). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6743694
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile