The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Nov. 22, 2002
Yoshitaka Fujiishi, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A photomask includes patterns corresponding to openings, a pattern corresponding to a trench and dummy patterns not to be transferred to a photoresist. The patterns are arranged in a matrix at a second pitch in the column direction and at a first pitch in the row direction. The dummy patterns are spaced at the second pitch from the most adjacent ones of the patterns aligned in the row direction, and the dummy patterns are spaced at a first pitch from the most adjacent ones of the patterns aligned in the column direction. Using such photomask, openings on each of which a lower electrode of a capacitor is to be formed are formed in an insulation layer in a memory cell array forming region, and the trench is formed in the insulation layer at the border between the memory cell array forming region and a peripheral circuit forming region.