The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Nov. 04, 2002
Sung Kee Park, Sangju-Shi, KR;
Ki Seog Kim, Ichon-Shi, KR;
Keun Woo Lee, Ichon-Shi, KR;
Keon Soo Shim, Ichon-Shi, KR;
Hynix Semiconductor Inc., Ichon-shi, KR;
Abstract
The present invention relates to a method of forming a floating gate in a flash memory device. Upon formation of a device isolation film, a space of a lower polysilicon layer for a floating gate is defined, a bird's beak is formed on an internal surface of a trench by subsequent well sacrificial oxidization process and well oxidization process and an upper polysilicon layer for a floating gate is then formed, so that the space of the floating gate is formed. Therefore, the present invention can reduce the cost since a mask process is not required compared to an existing stepper method and the process cost since a planarization process using chemical mechanical polishing process (CMP) is not required compared to the self-aligned floating mode.