The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Apr. 23, 2002
Shuji Nakao, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A photomask for aberration measurement of the present invention comprises a substrate that allows exposure light to pass through, a plurality of aperture patterns for measurement that are formed on the top surface of substrate in a plurality of measurement pattern formation regions, a light blocking film that is formed in the measurement pattern formation regions on the rear surface of substrate and that has a rear surface aperture pattern for substantially differentiating the respective incident angles of the exposure light to plurality of aperture patterns for measurement and a plurality of reference patterns that is formed in a single, or in a plurality, of reference pattern formation region(s) on the top surface of substrate, wherein the rear surface of substrate in the reference pattern formation region(s) is formed so that the respective incident angles of the exposure light to plurality of reference patterns becomes the substantially the same.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile