The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
Jun. 21, 2002
Applicant:
Inventor:
Ching-Fang Yen, Taipei Hsien, TW;
Assignee:
Macronix International Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/606 ;
U.S. Cl.
CPC ...
G11C 1/606 ;
Abstract
A non-volatile memory that combines a main memory array region and a redundant memory array region. The non-volatile memory is constructed without the use of the field oxide and dummy memories that typically separate the main and redundant memory array regions. Instead, the main memory and redundant memory are directly adjacent to each other on a doped region of the semiconductor wafer, and the bordering memory modules share a common source, drain, bit line, and ground line. A control method is used to allow the main memory decoder and redundant memory controller to pass signals and select between the main and redundant memory array areas.