The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
Mar. 12, 2002
Naoto Fujishima, Nagano, JP;
Akio Kitamura, Nagano, JP;
Gen Tada, Nagano, JP;
Masaru Saito, Nagano, JP;
Fuji Electric Co., Ltd., , JP;
Abstract
A semiconductor device includes a stable high withstand voltage lateral MISFET device which suppresses a gradual withstand voltage drop under high voltage and humidity conditions. In a MISFET device with a 700V breakdown drain voltage, the length of extension Mc (&mgr;m) of a field plate FP from the source side end of a thermal oxidization film, and the total insulating film thickness Tox (&mgr;m) directly below the extending tip of the field plate FP , are greater than or equal to lower limit values Mc , Tc . As a result, even if there is growth in charge accumulation at the interface of the mold resin, the field strength at a point B and point C is always lower than at a point A, which suppresses a gradual withstand voltage drop and a gradual ON current drop, whereby it becomes possible to realize a withstand voltage of 700V.