The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
Sep. 26, 2002
Marc Piazza, Pontcharra, FR;
Philippe Coronel, Barraux, FR;
STMicroelectronics S.A., Montrouge, FR;
Abstract
A method for forming in monolithic form a DRAM-type memory, including the steps of forming, on a substrate, parallel strips including a lower insulating layer, a strongly-conductive layer, a single-crystal semiconductor layer, and an upper insulating layer; digging, perpendicularly to the strips, into the upper insulating layer and into a portion of the semiconductor layer, first and second parallel trenches, each first and second trench being shared by neighboring cells; forming, in each first trench, a first conductive line according to the strip width; forming, in each second trench, two second distinct parallel conductive lines, insulated from the peripheral layers; filling the first and second trenches with an insulating material; removing the remaining portions of the upper insulating layer; and depositing a conductive layer.