The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
Apr. 29, 2002
Ernst-Christian Richter, Erlangen-Bruck, DE;
Michael Sebald, Weisendorf, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A photoresist layer structuring process includes a substrate with a photoresist layer applied thereto in parts. The photoresist layer includes a film-forming polymer having molecular groups convertable into alkali-soluble groups by acid-catalyzed cleavage reactions. The polymer includes a photoacid generator liberating an acid on exposure to light in a wavelength range, and a photobase generator liberating a base on exposure to light in a wavelength range. First, the photoresist layer is exposed to light from the second range, the light wavelength being chosen so that the photoacid generator is substantially inert to the irradiation, and is exposed to light from the first range, the light wavelength being chosen so that the photobase generator is substantially inert to the irradiation. The photoresist layer is then heated to a temperature at which the cleavage reaction catalyzed by the photolytically produced acid takes place, and finally the photoresist layer is developed.