The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2004
Filed:
Jan. 17, 2003
Hiroo Masuda, Tokyo, JP;
Kazuyoshi Hara, Tokyo, JP;
Semiconductor Technology Academic Research Center, Yokohama, JP;
Abstract
There is provided a semiconductor device comprising a gate electrode which is formed on a semiconductor substrate through a gate insulating film and in which a plurality hexagonal rings are mutually connected so as to form a honeycomb structure, drain diffusion layers each formed in the semiconductor substrate on the inside of one hexagonal ring, source diffusion layers formed in the semiconductor substrate on the inside of a plurality of hexagonal rings which are adjacent to the hexagonal ring having the drain diffusion layer formed therein, and, insulating layers formed between respective source diffusion layers in the semiconductor substrate.