The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2004
Filed:
Mar. 22, 2002
Takamitsu Higuchi, Suwa, JP;
Setsuya Iwashita, Suwa, JP;
Hiromu Miyazawa, Suwa, JP;
Kazumasa Hasegawa, Suwa, JP;
Eiji Natori, Suwa, JP;
Seiko Epson Corporation, , JP;
Abstract
The present invention relates to a ferroelectric memory having a matrix-type memory cell array which has an excellent degree of integration, in which the angularity of the ferroelectric layer's hysteresis curve is improved. A ferroelectric memory having both integration and memory characteristics in which the angularity of the ferroelectric layer's hysteresis curve is improved is realized as follows. Namely, a structure is employed in which the memory cell array and the peripheral circuit are in a plane separated from one another, and the ferroelectric layer is made to undergo epitaxial growth on to a Si single crystal via a buffer and the first signal electrodes.