The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2004
Filed:
Jul. 18, 2002
Applicant:
Inventors:
Donald S. Miles, Plano, TX (US);
Douglas T. Grider, McKinney, TX (US);
Chidi P R Chidambaram, Richardson, TX (US);
Amitabh Jain, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
An improved source/drain extension process is provided by processing steps (steps A and G) that cover the wafer and dry etching steps (steps D and I) that provide side wall spacers of poly oxide and/or cap oxide from the PMOS gate areas before doing PMOS implanting steps(K and M). The capping of the wafer (step G)with the cap oxide after the NMOS implant also prevents the arsenic from out diffusing from the silicon. Further embodiments include implanting directly on the base.