The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2004
Filed:
Jan. 27, 2003
Yu-Chou Lee, Taipei, TW;
Yi-Tsai Hsu, Taoyuan, TW;
Chunghwa Picture Tubes, Ltd., Taipei, TW;
Abstract
A Thin Film Transistor (TFT) manufacture method, comprising manufacture of a gate, a gate isolation layer, a channel layer, and a source/drain. Wherein, the manufacture of the channel layer comprises: forming a first a-Si layer by using a low deposition rate (LDR) (Chemical Vapor Deposition, CVD); forming a second a-Si layer by using a high deposition rate (HDR); and forming an N+Mixed a-Si layer. When the first a-Si layer is formed in the present invention, the flux ratio of H /SiH is adjusted to a range from 0.40 to 1.00 to increase the number of defects in the first a-Si layer. When the TFT is irradiated by the light, the photo leakage current generated in the channel layer is trapped in the defects in the first a-Si layer. Therefore, the TFT photo leakage current can be significantly reduced.