The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2004
Filed:
Jun. 18, 2003
Applicant:
Inventors:
Chin-Wei Hu, Hsin-Chu Hsien, TW;
Kun-Hong Chen, Taipei Hsien, TW;
Assignee:
Au Optronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/120 ; H01L 2/13205 ; H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/120 ; H01L 2/13205 ; H01L 2/131 ;
Abstract
A plurality of thin-film transistors are formed on a substrate. An insulating layer and a metal layer are formed on the substrate, the metal layer including a source electrode and a drain electrode connecting to each of the transistors, and a channel region defined between the source electrode and the drain electrode. An organic layer is formed to cover the metal layer and the insulating layer. A transparent conductive layer is formed on the organic layer. Therein the insulating layer is simultaneously solidified when forming the organic layer, thus reducing surface leakage currents of the substrate.