The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Dec. 31, 2002
Vijay Parthasarathy, Phoenix, AZ (US);
Vishnu Khemka, Mesa, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
Amitava Bose, Tempe, AZ (US);
Todd Roggenbauer, Chandler, AZ (US);
Paul Hui, Mesa, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
An electronic component includes a semiconductor substrate ( ), an epitaxial semiconductor layer ( ) over the semiconductor substrate, and a semiconductor region ( ) in the epitaxial semiconductor layer. The epitaxial semiconductor layer has an upper surface ( ). A first portion ( ) of the epitaxial semiconductor layer is located below the semiconductor region, and a second portion ( ) of the epitaxial semiconductor layer is located above the semiconductor region. The semiconductor substrate and the first portion of the epitaxial semiconductor layer have a first conductivity type, and the semiconductor region has a second conductivity type. At least one electrically insulating trench ( ) extends from the upper surface of the epitaxial semiconductor layer into at least a portion of the semiconductor region. The semiconductor substrate has a doping concentration higher than a doping concentration of the first portion of the epitaxial semiconductor layer.