The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Feb. 26, 2003
Applicant:
Inventors:
Jean-Louis Robert, Le Cres, FR;
Julien Pernot, Montpellier, FR;
Jean Camassel, Saint-Clement-De-Riviere, FR;
Sylvie Contreras, Chemin Vieux, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/982 ;
U.S. Cl.
CPC ...
H01L 2/982 ;
Abstract
A metrological Hall effect sensor with sensitivity to temperature less than 250 ppm/° C. and with high Hall effect coefficient for temperatures greater than 200° C. formed in a multilayer structure comprising a thin active layer deposited on a substrate, wherein the substrate is made of monocrystalline silicon carbide (SiC), and wherein the thin active layer is made of a weakly type n-doped silicon carbide (SiC) semiconductor in the exhaustion regime.