The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Apr. 16, 2002
Renesas Technology Corp., Tokyo, JP;
Abstract
A second-level wire is formed by a dual damascene process in a insulating film. In an upper surface of the first insulating film a metal film is formed and serves as a first electrode of an MIM-type capacitor. A second insulating films has a structure in which a plurality of insulating films are layered on a second interconnection layer, in this order. In a first insulating film of the plurality of insulating films, a second electrode of the MIM-type capacitor is formed. The second electrode has a first metal film formed on a second insulating film of the plurality of the insulating films and a second metal film is formed on the first metal film. A portion of the second insulating film which is sandwiched between the first electrode and the second electrode of the MIM-type capacitor serves as a capacitor dielectric film of the MIM-type capacitor. In the second insulating film, a third-level wire is formed Thus, a semiconductor device and a method of manufacturing the same are provided such that the MIM-type capacitor is formed together with metal wires with no additional complicated step.