The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Feb. 07, 2000
Applicant:
Inventors:
Kazuhiro Aihara, Hyogo, JP;
Junichi Tsuchimoto, Hyogo, JP;
Yutaka Inaba, Hyogo, JP;
Kazutoshi Wakao, Hyogo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ;
Abstract
A semiconductor device with a capacitor having a charge retaining capability improved by preventing generation of a leakage current in a capacitor dielectric film, and a manufacturing method of the same are provided. An indium oxide film is formed to continuously cover the upper surfaces of a tungsten film and an interlayer oxide film. A tantalum oxide film is formed to continuously cover the surface of the indium oxide film and a portion of the upper surface of the interlayer oxide film. Another indium oxide film is formed to cover the upper surface of the tantalum oxide film.