The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Jan. 11, 2002
Applicant:
Inventors:
Cheng-Cheng Guo, Kaohsiung, TW;
Dian-Hau Chen, Hsinchu, TW;
Li-Kong Turn, Taichung, TW;
Han-Ming Sheng, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
Abstract
Within a damascene method for forming a microelectronic fabrication, there is employed an etch stop layer comprising a comparatively low dielectric constant dielectric material sub-layer having formed thereupon a comparatively high dielectric constant dielectric material sub-layer. Within the method there is also simultaneously etched: (1) an anti-reflective coating layer from an inter-metal dielectric layer; and (2) the etch stop layer from a contact region. The microelectronic fabrication is formed with enhanced performance and enhanced reliability.