The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2004

Filed:

Jan. 16, 2003
Applicant:
Inventors:

Yongjun Jeff Hu, Boise, ID (US);

Satish Bedge, Boise, ID (US);

Kevin Torek, Meridian, ID (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ; H01L 2/1336 ;
Abstract

Fabrication techniques for making a semiconductor device. More specifically, techniques for fabricating a wordline in a memory device are provided. Specific heat treatments may be added to the process flow to remove or weaken certain layers formed in the wordlines. For instance, an SiN layer and a crystallized W N layer may form during the fabrication of the wordline. While the layers may provide certain advantages at certain points in the fabrication process, they may be undesirable at subsequent points. One or more anneal processes may be implemented at various points in the processing to eliminate the crystallized W N layer and weaken the SiN layer.


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