The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2004
Filed:
Oct. 07, 1996
Renesas Technology Corp., Tokyo, JP;
Abstract
A conductive layer contact structure is provided, in which a contact hole of a diameter smaller than the resolution of photolithography technique is formed in a stabilized manner by an etching with low aspect ratio, the contact resistance regarding a conductive layer formed through this contact hole is low, and the step coverage of the conductive layer is satisfactory such that it is not electrically short-circuited with other conductive layers. A silicon oxide film and a silicon nitride film are formed on a gate electrode as first insulation layers. A silicon oxide film is formed as a second insulation layer having a high etching selectivity with respect to the silicon nitride film provided as an upper insulation layer of the first insulation layer. Reaching a surface of an n diffused layer formed at a surface of a silicon substrate as a conductive region, a contact hole is formed. A sidewall spacer is formed at the inner sidewall of the silicon oxide film defining a hole. Due to this sidewall spacer, the contact hole having a diameter smaller than the resolution of photolithography technique is defined by the inner sidewall of the silicon oxide film and silicon nitride film.