The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2004
Filed:
Aug. 22, 2003
Applicant:
Inventors:
Assignee:
Electronics and Telecommunications Research Institute, Daejon-Shi, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/144 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/144 ; H01L 2/1469 ;
Abstract
The present invention relates to a method of forming a thin film in a semiconductor device. According the method, the thin film is formed by alternately repeating an atomic layer deposition (ALD) method and a plasma enhanced atomic layer deposition (PEALD) method and further by adjusting the ratio of repetition times of the methods, so that it is possible to adjust and estimate the growth rate, density, and material properties such as refraction index, dielectric constant, electric resistance, etc.
Published as: