The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2004
Filed:
May. 22, 2002
Applicant:
Inventors:
Youngmin Kim, Allen, TX (US);
Amitava Chatterjee, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 2/18238 ;
Abstract
An integrated semiconductor system is provided that is formed on a substrate . A dual implant mask is used to change the characteristics of semiconductor devices formed in regions of the substrate having different characteristics. Transistors and can be formed on the same substrate and have different electrical characteristics.
Kim, Youngmin. (2004). Transistors having selectively doped channel regions (U.S. Patent No. 6730555). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6730555
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile