The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2004
Filed:
Mar. 03, 2003
Applicant:
Inventors:
Hyunwoo Kim, Suwon, KR;
Sanggyun Woo, Yongin, KR;
Assignee:
Samsung Electronics Co., Ltd., Kyongki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 5/00 ;
U.S. Cl.
CPC ...
G03C 5/00 ;
Abstract
A method for forming fine patterns, particularly contact holes, on semiconductor devices by forming an ArF resist pattern and then reducing the size of pattern openings by exposing the resist pattern to radiation from an VUV (vacuum ultraviolet) excimer laser or E-beam radiation during thermal treatment to reduce, temporarily, the T of the resist pattern and allow it to flow, thereby reducing the size of the spaces and openings in the pattern.