The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2004
Filed:
Jun. 11, 2002
Taylor R. Efland, Richardson, TX (US);
Chin-Yu Tsai, HsinChu Hsien, TW;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A tank-isolated drain extended power device ( ) having an added laterally extending heavily doped p-type region ( ) in combination with a p-type Dwell ( ) which reduces minority carrier buildup. The p-doped regions are defined in a P-epi layer surrounded by a buried NBL region ( ) connected with a deep low resistance drain region ( ) forming a guardring. This additional laterally extending p-doped region ( ) reduces minority carrier build up such that recovery time is significantly reduced, and power loss is also significantly reduced due to reduced collection time of the minority carriers. The device may be formed as an LDMOS device.