The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2004
Filed:
May. 02, 2002
Junko Izumitani, Tokyo, JP;
Hiroki Takewaka, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device has a multilayer interconnection structure in which a plurality of interconnection layers is formed in an insulating film. The multilayer interconnection structure has a first metal film made of a first material and functioning as a first interconnection belonging to an interconnection layer other than an uppermost interconnection layer, a second metal film made of a second material and functioning as a second interconnection belonging to the uppermost interconnection layer, a third metal film made of the first material and belonging to an interconnection layer other than the uppermost interconnection layer and functioning as a bonding pad, an opening formed in the insulating film and having its bottom defined by the third metal film, and a bonding wire connected to the third metal film through the opening. The second material has a lower resistance and is more susceptible to oxidation than the first material.