The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Mar. 07, 2001
Applicant:
Inventors:
Luc Ouellet, Granby, CA;
Annie Dallaire, St-Cesaire, CA;
Assignee:
Dalsa Semiconductor Inc., Waterloo, CA;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/10 ;
U.S. Cl.
CPC ...
G02B 6/10 ;
Abstract
A method is disclosed for making a device having one or more deposited layers and subject to a post deposition high temperature anneal. Opposing films having similar mechanical properties are deposited on the front and back faces of a wafer, which is subsequently subjected a high temperature anneal. The opposing films tend to cancel out stress-induced warping of the wafer during the subsequent anneal.