The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2004

Filed:

Jun. 22, 2001
Applicant:
Inventors:

Hiroshi Akahori, Hamamatsu, JP;

Hisanori Suzuki, Hamamatsu, JP;

Kazuhisa Miyaguchi, Hamamatsu, JP;

Masaharu Muramatsu, Hamamatsu, JP;

Koei Yamamoto, Hamamatsu, JP;

Assignee:

Hamamatsu Photonics K.K., Shizuoka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/100 ; H04N 3/14 ;
U.S. Cl.
CPC ...
H01L 3/100 ; H04N 3/14 ;
Abstract

A semiconductor energy detector as disclosed herein is arranged so that an aluminum wiring pattern is formed on the front side of transfer electrodes of a CCD vertical shift register, which pattern includes meander-shaped auxiliary wirings for performing auxiliary application/supplement and additional wirings for performing auxiliary supplement of transfer voltages in a way independent of the auxiliary wirings with respective ones of such wirings being connected to corresponding transfer electrodes to thereby avoid a problem as to lead resistivities at those transfer electrodes made of polycrystalline silicon, thus achieving the intended charge transfer at high speeds with high efficiency.


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