The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Feb. 24, 2000
Applicant:
Inventor:
Seiichi Fukuda, Kanagawa, JP;
Assignee:
Sony Corporation, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A dry etching method and a method of manufacturing a semiconductor apparatus are disclosed with which satisfactory shape controllability can be obtained and a gate electrode formed by laminating tungsten can be formed without any breakage of a gate insulating film. A polysilicon film, a reaction barrier film made of tungsten nitride, a tungsten film and an offset film made of silicon nitride are sequentially formed on a gate insulating film. Then, a photoresist is used as a mask to etch the tungsten film. The etching process is performed by mixed gas of fluorine gas, chlorine, oxygen and nitrogen.