The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Sep. 24, 2002
Seetharaman Sridhar, Richardson, TX (US);
Youngmin Kim, Allen, TX (US);
Zhiqiang Wu, Plano, TX (US);
Mark S. Rodder, University Park, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of forming a semiconductor device using shallow trench isolation, includes forming a trench within a semiconductor substrate and forming a screen dielectric stack outwardly from the semiconductor substrate. The screen dielectric stack includes a first sacrificial dielectric layer disposed outwardly from the semiconductor substrate and a second sacrificial dielectric layer disposed outwardly from and in contact with the first sacrificial dielectric layer. In one embodiment, the first sacrificial dielectric layer is formed before forming the trench and the second sacrificial dielectric layer is formed after forming the trench.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile