The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Apr. 04, 2003
Tsutomu Hayakawa, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A method for manufacturing a DRAM includes the steps of forming a gate oxide film, a polysilicon film and a tungsten silicide film consecutively on a silicon substrate, selective etching the tungsten silicide film, covering exposed side surfaces of the tungsten silicide film by a polysilicon side-wall film, selectively etching the polysilicon film, oxidizing the polysilicon side-wall film and exposed surfaces of the polysilicon film, and forming a gate electrode including the polysilicon film and the tungsten silicide film. The resultant DRAM has lower leakage current and excellent refresh characteristics due to less contamination of diffused regions by the tungsten particles.