The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
May. 19, 2003
Applicant:
Inventors:
Dong-Seok Nam, Seoul, KR;
Ji-Soo Kim, Yongin-shi, KR;
Assignee:
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18234 ;
U.S. Cl.
CPC ...
H01L 2/18234 ;
Abstract
In the method of forming fine patterns of a semiconductor integrated circuit, a mask layer is formed over a semiconductor structure having a first region and a second region. A portion of the mask layer over the first region is removed to expose the semiconductor structure, and sacrificial layer patterns are formed over the exposed semiconductor structure. Then, spacers are formed on sidewalls of the sacrificial layer patterns and the mask layer, and portions of the spacers are removed to create fine mask patterns. The semiconductor structure is then patterned using the fine mask patterns to create fine patterns.