The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Oct. 05, 2001
Applicant:
Inventors:
Stanford R. Ovshinsky, Bloomfield Hills, MI (US);
Boil Pashmakov, Troy, MI (US);
David V. Tsu, Auburn Hills, MI (US);
Assignee:
Energy Conversion Devices, Inc., Rochester Hills, MI (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 3/26 ; H01L 3/100 ;
U.S. Cl.
CPC ...
B32B 3/26 ; H01L 3/100 ;
Abstract
A non-single crystalline semiconductor material includes coordinatively irregular structures characterized by distorted chemical bonding, reduced dimensionality and novel electronic properties. A process for forming the material permits variation of the size, concentration and spatial distribution of coordinatively irregular structures. The electronic properties of the material can be changed by controlling the characteristics of the coordinatively irregular structures.