The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Apr. 10, 2002
Masahiro Ogawa, Higashiosaka, JP;
Masahiro Ishida, Hirakata, JP;
Satoshi Tamura, Takaraduka, JP;
Shinichi Takigawa, Ibaraki, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A method for fabricating a Group III nitride semiconductor substrate according to the present invention includes the steps of: (a) preparing a substrate; (b) forming, on the substrate, a first semiconductor layer composed of a Group III nitride semiconductor; (c) forming, on the first semiconductor layer, a heat diffusion suppressing layer lower in thermal conductivity than the first semiconductor layer; (d) forming, on the heat diffusion suppressing layer, a second semiconductor layer composed of a Group III nitride semiconductor; and (e) irradiating the first semiconductor layer through the substrate with a light beam transmitted by the substrate and absorbed by the first semiconductor layer to decompose the first semiconductor layer.