Etching and growth simulation method using a modified cell model

Abstract

A computer simulation method for a semiconductor device manufacturing process, includes: a first step for forming an initial section of the material with only open cells exposed to the growth or etching among the cells; a second step for inputting information including growth or etching points into each open cell; a third step for computing a movement speed for the growth or etching points; a fourth step for moving the growth or etching points for a time determined according to the movement speed; and a fifth step for forming a new etching section by re-arranging the open cells exposed to the growth or etching, after moving the growth or etching points, the second to fifth steps being repeatedly performed on the re-arranged open cells until the sum of the predetermined time reaches the time (T).