The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Dec. 27, 2001
Kazumasa Hasegawa, Suwa, JP;
Eiji Natori, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A ferroelectric memory device includes memory cells including ferroelectric capacitors formed in regions in which first signal electrodes intersect second signal electrodes. Information is written into a selected memory cell by applying a write voltage between one of the first signal electrodes and one of the second signal electrodes in the memory cell. Information is read from the selected memory cell by applying a read voltage between one of the first signal electrodes and one of the second signal electrodes in the memory cell. Provided that the write voltage is ±Vs and the read voltage is either +Vs or −Vs, |Vs| is less than the absolute value of a saturation voltage at which remanent polarization of the ferroelectric capacitors is saturated.