The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Dec. 12, 2000
Goro Kitsukawa, Hinode-machi, JP;
Yoji Idei, Asaka, JP;
Kanji Oishi, Koganei, JP;
Akira Ide, Musashino, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A 64Mb DRAM includes memory cell array areas , sense amplifier areas , subword driver areas , and cross areas . For each horizontal input/output line IOH paraleel to the word line W, throuh holes on the sense amplifiers provide connections between the second metal line hierarchy M and the third metal line hierarchy M . The vertical input/output line IOV parallel to the bit line BL runs through a plurality of memory cell array areas in a direction parallel to the column selection signal line YS and connects to the main amplifier MA outside the memory cell array areas . In this input/output line configuration, the greater the number of word lines W that are selected, the greater the number of bits that can be output.