The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Aug. 05, 2002
Applicant:
Inventors:
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1113 ;
U.S. Cl.
CPC ...
H01L 3/1113 ;
Abstract
N well contact area is integrally formed with second diffused area within the upper parts of a N well and a P well, and P well contact area is integrally formed with first diffused area in the upper parts of the P well and the N well.
Nii, Koji. (2004). Semiconductor device with integrally formed well contact areas (U.S. Patent No. 6717223). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6717223
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile