The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Aug. 13, 2002
Applicant:
Inventors:
Yukihiko Nakata, Vancouver, WA (US);
Apostolos Voutsas, Portland, OR (US);
John Hartzell, Camas, WA (US);
Assignee:
Sharp Laboratories of America, Inc., Camas, WA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/904 ;
U.S. Cl.
CPC ...
H01L 2/904 ;
Abstract
A thin film transistor includes an active silicon layer deposited by physical vapor deposition (PVD), wherein a silicon precursor is doped with impurities prior to use as a target in the PVD chamber, wherein the precursor has a resistivity in the range of about 0.5 &OHgr;-cm<&rgr; <60 &OHgr;-cm; and wherein the target includes plural, rectangular tiles wherein all individual tiles are larger than 8.5 inches square.