The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2004

Filed:

Jun. 11, 2001
Applicant:
Inventors:

Yasuhiro Iijima, Tokyo, JP;

Mariko Kimura, Tokyo, JP;

Takashi Saito, Tokyo, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 1/200 ; H01F 6/00 ; H01L 3/980 ; B05D 5/12 ;
U.S. Cl.
CPC ...
H01B 1/200 ; H01F 6/00 ; H01L 3/980 ; B05D 5/12 ;
Abstract

A polycrystalline thin film B consisting mainly of oxide crystal grains which have a crystal structure of a Type C rare earth oxide represented by one of the formulas Y O , Sc O , Nd O , Sm O , Eu O , Gd O , Tb O , Dy O , Ho O , Er O , Yb O , Lu O , and Pm O formed on a film forming surface of a polycrystalline substrate A wherein grain boundary inclination angles between the corresponding crystal axes of different crystal grains in the polycrystalline thin film along a plane parallel to the film forming surface of the polycrystalline substrate are controlled within 30 degrees.


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