The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Nov. 08, 2001
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method of fabricating a contact pad of a semiconductor device is disclosed. The method includes forming a stopping layer over the semiconductor substrate. An interdielectric layer is formed over the stopping layer, and the interdielectric layer is planarized to expose at least a gate upper dielectric layer by using a material which exhibits a high-polishing selectivity with respect to the interdielectric layer. The interdielectric layer is etched in a region in which a contact pad will be formed on the semiconductor substrate. A conductive material is deposited on the semiconductor substrate. Finally, planarizing is carried out using a material which exhibits a high-polishing selectivity of the upper dielectric layer with respect to the conductive material.