The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Sep. 01, 1999
Hiraku Ishikawa, Kofu, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A wafer W is placed on a lower electrode provided inside a processing chamber of a CVD apparatus and is heated to achieve a temperature equal to or greater than 350° C. and lower than 450° C. SiH and SiF with both their flow rates set at 20 sccm, B H with its flow rate set at 7 sccm, O with its flow rate set at 200 sccm and Ar with its flow rate set at 400 sccm are introduced into the processing chamber , and a pressure within the range of 0.01 Torr˜10 Torr is set. 20 W/cm power at a frequency of 27.12 MHz and 10 W/cm power at a frequency of 400 kHz are respectively applied to an upper electrode and the lower electrode to generate plasma, and a layer insulating film constituted of an SiOB film containing F is formed on the wafer W. With the B atoms incorporated into the molecular skeleton in the network structure of the SiOB film and the F atoms lowering the hygroscopicity by preventing formation of Si—OH bonds and the like, a dielectric constant of approximately 3.0 is achieved.